Spintronics is emerging as leading contender for future storage and logic devices as it offers non-volatile functionality that can scale to high densities, fast speed with unlimited endurance. In spintronics, spin current i.e. a flow of spin angular momentum carried by electron spins, had played a vital role in unveiling the spin dependent transport phenomena in magnetic nanostructures. In particular, spin current without accompanying charge current, so-called pure spin current is of great interest for pure spin current driven spin transfer torque (STT) and spin orbit torque (SOT) devices. Several routes of generating pure spin current by electrical means include (1) nonlocal spin injection in lateral spin valves, spin Hall effect and (3) spin pumping.

Our research group is currently focusing on the various aspects of the nano-magnetism and spin-transport phenomena’s like, Voltage controlled magnetic anisotropy (VCMA), spin Hall effect (SHE), Spin pumping (SP) – Inverse spin Hall effect (ISHE), Rashba-Edelstein effect (REE), Inverse REE, anisotropic magnetoresistance (AMR), Rashba Plasmons (RP) and Terahertz (THz) spintronics emitters.